NCEP01T18 mosfet equivalent, n-channel super trench power mosfet.
* VDS =100V,ID =180A RDS(ON) <3.0mΩ @ VGS=10V
Schematic diagram
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C.
that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other ap.
The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. .
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